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CM150DU-12F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design Dual IGBTMODTM
150 Amperes/600 Volts
N
P - NUTS (3 PLACES) TC MEASURING POINT A D
Q (2 PLACES)
E
E2G2
CM
C2E1
E2
C1
F
G
B
H
G1E1
F
M
K
K
J
R
C
L
G2 E2
RTC
Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control UPS Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DU-12F is a 600V (VCES), 150 Ampere Dual IGBTMODTM Power Module.
Type CM Current Rating Amperes 150 VCES Volts (x 50) 12
C2E1
E2
C1
RTC
E1 G1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 3.70 1.89 Millimeters 94.0 48.0 Dimensions J K L M N P Q R Inches 0.53 0.91 1.13 0.67 0.28 M6.5 0.26 Dia. 0.16 Millimeters 13.5 23.0 28.7 17.0 7.0 M6.5 6.5 Dia. 4.0
1.18 +0.04/-0.02 30.0 +1.0/-0.5 3.150.01 0.43 0.16 0.71 0.02 80.00.25 11.0 4.0 18.0 0.5
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-12F Trench Gate Design Dual IGBTMODTM 150 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM150DU-12F -40 to 150 -40 to 125 600 20 150 300* 150 300* 520 31 40 310 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V, Tj = 25C IC = 150A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V Min. - - 5 - - - - Typ. - - 6 1.6 1.6 930 - Max. 1 20 7 2.2 - - 2.6 Units mA A Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-12F Trench Gate Design Dual IGBTMODTM 150 Amperes/600 Volts
Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 150A, VGE1 = VGE2 = 15V, RG = 4.2 , Inductive Load Switching Operation IE = 150A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 2.8 Max. 41 2.7 1.5 120 100 350 250 150 - Units nf nf nf ns ns ns ns ns C
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/2 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied - 0.035 - C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min. -
Typ.
Max. 0.24
Units C/W C/W C/W
-
-
0.47
-
0.16
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DU-12F Trench Gate Design Dual IGBTMODTM 150 Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
300
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
250 200 150
VGE = 20V 9
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25C
11 15
10
3
9.5 VGE = 15V Tj = 25C Tj = 125C
5
Tj = 25C
4 3
IC = 300A
2
8.5
2 1
100 50 0 0 1 2 3 4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1
IC = 150A IC = 60A
8 7.5
0 0 50 100 150 200 250 300
COLLECTOR-CURRENT, IC, (AMPERES)
0 0 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
103
Tj = 25C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
102
Cies
103
td(off) tf
102
101
SWITCHING TIME, (ns)
102
td(on)
101
100
VGE = 0V
Coes Cres
101
tr
VCC = 300V VGE = 15V RG = 4.2 Tj = 125C Inductive Load
100 0 1.0 2.0 3.0 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1 10-1
100
101
102
100 100
101
102
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi)
102
REVERSE RECOVERY TIME, trr, (ns)
102
Irr trr
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101
10-3
10-2
10-1
100
101
IC = 150A
16 12 8 4
VCC = 200V VCC = 300V
100
Per Unit Base Rth(j-c) = 0.24C/W (IGBT) Rth(j-c) = 0.47C/W (FWDi) Single Pulse TC = 25C
101
VCC = 300V VGE = 15V RG = 4.2 Tj = 25C Inductive Load
101
10-1
10-1
10-2
10-2
100 101
102
EMITTER CURRENT, IE, (AMPERES)
100 103
0 0 200 400 600 800 1000 1200 1400
GATE CHARGE, QG, (nC)
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4

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